EFFECT OF IMPURITIES ON THE THERMAL-OXIDATION PROCESS IN INP

被引：5

作者：

BESERMAN, R

CYTERMANN, C

BRENER, R

LABORDE, J

SALZMAN, I

WEYERS, M

BRAUERS, A

BALK, P

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,HAIFA,ISRAEL

[2] TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,HAIFA,ISRAEL

[3] INST NATL SCI APPL,F-35043 RENNES,FRANCE

[4] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,W-5100 AACHEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.103325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sulfur (n-type) and zinc (p-type) doped and undoped InP have been thermally oxidized in the temperature range 400°C≤T≤600°C. The Raman scattering and Auger electron spectroscopy techniques show that the doping enhances the formation of the crystalline InPO4 phase and favors the growth of crystalline phosphorus at the oxide/InP interface.

引用

页码：919 / 921

页数：3

共 11 条

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