AUGER ANALYSIS OF THERMALLY OXIDIZED GAAS SURFACES

被引：5

作者：

KEE, RW ^{[1
]}

SHIOTA, I ^{[1
]}

MIYAMOTO, N ^{[1
]}

NISHIZAWA, J ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 06期

关键词：

D O I：

10.1149/1.2131610

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：998 / 1000

页数：3

共 9 条

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[2]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[3] AUGER ANALYSIS OF SIO2-SI INTERFACE [J].

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[4]

KEE RW, 1977, THESIS COLORADO STAT

[5] LOW-TEMPERATURE OXIDATION OF SILICON STUDIED BY PHOTOSENSITIVE ESR AND AUGER-ELECTRON SPECTROSCOPY [J].

RUZYLLO, J ;

SHIOTA, I ;

MIYAMOTO, N ;

NISHIZAWA, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) :26-29

[6] AUGER ANALYSIS OF THERMALLY OXIDIZED GAAS SURFACES [J].

SHIOTA, I ;

MIYAMOTO, N ;

NISHIZAWA, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1405-1409

[7]

Solomon J. S., 1976, American Laboratory, V8, P31

[8]

SPICER WE, 1977, RES DEV, V28, P20

[9] AUGER ANALYSIS OF ANODIC OXIDE INP INTERFACE [J].

WILMSEN, CW ;

KEE, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :953-956

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