RADIATION AND OXIDE-METAL INTERACTION IN MOS

被引：5

作者：

LINDMAYER, J

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1971年 / NS18卷 / 06期

关键词：

D O I：

10.1109/TNS.1971.4326418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：91 / +

页数：1

共 12 条

[1] EFFECTS OF IONIZING RADIATION ON MOS DEVICES [J].

ANDRE, B ;

BUXO, J ;

ESTEVE, D ;

MARTINOT, H .

SOLID-STATE ELECTRONICS, 1969, 12 (02) :123-+

[2] EFFECTS OF X-RAY IRRADIATION ON CHARACTERISTICS OF METAL-OXIDE-SILICON STRUCTURES - (VOLTAGE SHIFT SURFACE STATES 10 TO 100 KEV E/T) [J].

COLLINS, DR ;

SAH, CT .

APPLIED PHYSICS LETTERS, 1966, 8 (05) :124-&

[3] CHARACTERISTICS OF THERMAL ANNEALING OF RADIATION DAMAGE IN MOSFETS [J].

DANCHENKO, V ;

DESAI, UD ;

BRASHEARS, SS .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2417-+

[4]

FOWKES FM, 1966, OCT EL SOC M

[5] PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE [J].

GOODMAN, AM .

PHYSICAL REVIEW, 1966, 144 (02) :588-&

[6]

KOOI E, 1965, PHILIPS RES REP, V20, P595

[7] RADIATION RESISTANT MOS DEVICES [J].

LINDMAYER, J ;

NOBLE, WP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (09) :637-+

[8]

LINDMAYER J, 1965, T METALL SOC AIME, V233, P530

[9]

LINDMAYER J, 1965, 25 ANN C PHYS EL, P188

[10] RADIATION-INDUCED SPACE-CHARGE BUILDUP IN MOS STRUCTURES [J].

MITCHELL, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :764-+

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