PHOTOEMISSION-STUDY OF THE NEGATIVE ELECTRON-AFFINITY SURFACES OF O/CS/SI(001)2X1 AND O/K/SI(001)2X1

被引：29

作者：

ABUKAWA, T ^{[1
]}

ENTA, Y ^{[1
]}

KASHIWAKURA, T ^{[1
]}

SUZUKI, S ^{[1
]}

KONO, S ^{[1
]}

SAKAMOTO, T ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.576564

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have found that a negative electron affinity (NEA) surface can be formed by exposing a K saturated Si(001)2Xl surface to oxygen gas just as in the formation of a NEA surface of O/Cs/Si (001) 2 × 1. By x-ray photoelectron diffraction we have found that the arrangement of O and K atoms in the NEA O/K/Si(001)2 × 1 surface is essentially the same as that in the NEA O/Cs/Si (001)2X 1 surface in which a double layer of alkali metal is preserved. Angle resolved ultraviolet photoelectron spectroscopy (ARUPS) has been applied to the two NEA surfaces. The resulting ARUPS spectra can give useful information on bonding at the NEA surfaces if they are combined with theoretical calculations. © 1990, American Vacuum Society. All rights reserved.

引用

页码：3205 / 3209

页数：5

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