Properties of carbon nitride layers generated by direct plasma beam deposition

被引：23

作者：

Weber, F. -R. ^{[1
]}

Oechsner, H. ^{[1
]}

机构：

[1] Univ Kaiserslautern, Tech Phys & Schwerpunkt Matwissensch, D-67653 Kaiserslautern, Germany

来源：

SURFACE & COATINGS TECHNOLOGY | 1995年 / 74-75卷 / 1-3期

关键词：

carbon nitride films; plasma beam deposition;

D O I：

10.1016/0257-8972(95)08269-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A capacitively coupled r.f. plasma beam source was applied for direct plasma beam deposition of thin carbon nitride (CxNy) layers. For N-2-Ar mixtures and pure N-2 as working gases and by sputter injection of carbon into the source plasma, mixed plasma beams containing N-2(+),N+, Ar+ ions and post-ionized C+ are obtained. The CN films were deposited on Si(100) substrates with an ion energy of 100 eV in the electrically neutral plasma beam. A distinct influence of the nitrogen fraction in the working gas on both the growth rate and the film composition was found. Nitrogen concentrations in the films up to 41 at.% are achieved. IR spectra of the deposited films corroborate that nitrogen is chemically bonded to carbon in the C-N network. The formation of small beta-C3N4 agglomerates under specific deposition conditions is surmised by several results from scanning tunnelling microscopy imaging, ellipsometric studies and hardness measurements.

引用

页码：704 / 709

页数：6

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