EMISSION OF MCS+ SECONDARY IONS FROM SEMICONDUCTORS BY CESIUM BOMBARDMENT

被引：39

作者：

GNASER, H

OECHSNER, H

机构：

[1] Universität Kaiserslautern, Fachbereich Physik, Kaiserslautern

来源：

SURFACE AND INTERFACE ANALYSIS | 1994年 / 21卷 / 04期

关键词：

D O I：

10.1002/sia.740210408

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The emission of MCs+ molecular ions sputtered from a variety of elemental (Si, Ge, a-C: H) and compound (GaAs, InP, InSb, ZnTe, ZnMnTe, ZnSe, CdS, CdSe, CdTe) semiconductors by Cs+ ion impact was investigated. The energy spectra of MCs+ species were found to be very similar to that of Cs+ ions but, in most cases, are shifted slightly (approximately 1 eV) to higher energies. The useful yields of MCs+ secondary ions range from 10(-6) (for HCs+) to 10(-4) and, for a given molecular species, are largely independent of the specimen. For a series of Ge1-xOx samples it was established that the GeCs+ intensity is constant up to an oxygen content of approximately 10 at.% but the emission of GeOCs+ ions is prominent above this value and constitutes a competing ejection channel.

引用

页码：257 / 260

页数：4

共 13 条

[1]

BENNINGHOVEN A, 1989, SECONDRY ION MASS SP

[2] A NEW SECONDARY ION MASS-SPECTROMETRY TECHNIQUE FOR III-V SEMICONDUCTOR COMPOUNDS USING THE MOLECULAR-IONS CSM [J].

GAO, Y .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3760-3762

[3] NOVEL DETECTION SCHEME FOR THE ANALYSIS OF HYDROGEN AND HELIUM BY SECONDARY ION MASS-SPECTROMETRY [J].

GNASER, H ;

OECHSNER, H .

SURFACE AND INTERFACE ANALYSIS, 1991, 17 (09) :646-649

[4] SIMS DEPTH PROFILE ANALYSIS USING MCS+ MOLECULAR-IONS [J].

GNASER, H ;

OECHSNER, H .

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1991, 341 (1-2) :54-56

[5]

Gnaser H., 1992, SECONDARY ION MASS S, P95

[6] ON THE USE OF CSX+ CLUSTER IONS FOR MAJOR ELEMENT DEPTH PROFILING IN SECONDARY ION MASS-SPECTROMETRY [J].

MAGEE, CW ;

HARRINGTON, WL ;

BOTNICK, EM .

INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1990, 103 (01) :45-56

[7]

MIGEON HN, 1986, SECONDARY ION MASS S, V5, P155

[8] QUANTITATIVE-ANALYSIS AND DEPTH PROFILING OF RARE-GASES IN SOLIDS BY SECONDARY-ION MASS-SPECTROMETRY - DETECTION OF (CSR)+ MOLECULAR-IONS (R = RARE-GAS) [J].

RAY, MA ;

BAKER, JE ;

LOXTON, CM ;

GREENE, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (01) :44-50

[9] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J].

SIGMUND, P .

PHYSICAL REVIEW, 1969, 184 (02) :383-+

[10] EVALUATION OF A CESIUM POSITIVE-ION SOURCE FOR SECONDARY ION MASS-SPECTROMETRY [J].

STORMS, HA ;

BROWN, KF ;

STEIN, JD .

ANALYTICAL CHEMISTRY, 1977, 49 (13) :2023-2030

← 1 2 →