JUNCTION-SIDE UP OPERATION OF (AL)GAINP LASERS WITH VERY LOW THRESHOLD CURRENTS

被引：15

作者：

UNGER, P

ROENTGEN, P

BONA, GL

机构：

[1] IBM Research Division, Zurich Research Laboratory, 8803 Ruschlikon

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 16期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920972

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained (Al)GaInP quantum-well ridge lasers with AlGaAs cladding layers have been fabricated on a 5-degrees-off oriented GaAs substrate. Owing to a heat spreading layer, the devices can be operated junction-side up with a CW threshold current of 13 mA. Singlemode operation is achieved up to power levels of 15 mW for devices with uncoated facets.

引用

页码：1531 / 1532

页数：2

共 5 条

[1]

BROOM RF, 1991, I PHYS C SER, V117, P473

[2]

BUCHAN N, 1991, I PHYS C SER, V120, P529

[3]

HASHIMOTO J, 1971, ELECTRON LETT, V27, P2028

[4] HIGH-TEMPERATURE (GREATER-THAN-150-DEGREES-C) AND LOW THRESHOLD CURRENT OPERATION OF ALGAINP/GAXIN1-XP STRAINED MULTIPLE QUANTUM-WELL VISIBLE LASER-DIODES [J].