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HIGH-TEMPERATURE (GREATER-THAN-150-DEGREES-C) AND LOW THRESHOLD CURRENT OPERATION OF ALGAINP/GAXIN1-XP STRAINED MULTIPLE QUANTUM-WELL VISIBLE LASER-DIODES

被引：37
作者：
KATSUYAMA, T
YOSHIDA, I
SHINKAI, J
HASHIMOTO, J
HAYASHI, H
机构：
[1] Optoelectronics RandD Laboratories, Sumitomo Electric Industries Ltd., Sakae-ku, Yokohama 244, 1, Taya-cho
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 26期
关键词：
D O I：
10.1063/1.105723
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High temperature and very low threshold current operation of a separate confinement heterostructure (SCH) AlGaInP/GaxIn1-xP (x = 0.43) strained multiple quantum well (SMQW) lasers has been achieved. Continuous wave (cw) operation was observed up to at least 150-degrees-C with an output power of more than 7 mW, which is the highest cw operating temperature ever reported for devices operating in the visible wavelength region. The characteristic temperature between 20 and 80-degrees-C was 130 K. The threshold current and threshold current density at 25-degrees-C were 13.9 mA for a 5 X 160-mu-m device and 430 A/cm2 for a 80 X 770-mu-m device.
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页码：3351 / 3353
页数：3
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