SI AND GAAS PHOTOCAPACITIVE MIS INFRARED DETECTORS

被引：18

作者：

SHER, A ^{[1
]}

TSUO, YH ^{[1
]}

MORIARTY, JA ^{[1
]}

MILLER, WE ^{[1
]}

CROUCH, RK ^{[1
]}

机构：

[1] NASA,LANGLEY RES CTR,HAMPTON,VA 23665

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 04期

关键词：

D O I：

10.1063/1.327886

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2137 / 2148

页数：12

共 13 条

[1]

CREMOUX BD, 1972, REV TECH THOMSON CSF, V4, P481

[2]

Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[3] LOW-TEMPERATURE PHOTOCAPACITY MEASUREMENT IN MOS STRUCTURE [J].

KAMIENIECKI, E .

SOLID-STATE ELECTRONICS, 1973, 16 (12) :1487-1493

[4]

KRUSE PW, 1963, ELEMENTS INFRARED TE, P122

[5] FREQUENCY-DEPENDENCE OF PHOTO-EMF OF STRONGLY INVERTED GE AND SI MIS STRUCTURES .2. EXPERIMENTS [J].

NAKHMANSON, RS ;

OVSYUK, ZS ;

POPOV, LK .

SOLID-STATE ELECTRONICS, 1975, 18 (7-8) :627-634

[6] FREQUENCY-DEPENDENCE OF PHOTO-EMF OF STRONGLY INVERTED GE AND SI MIS STRUCTURES .1. THEORY [J].

NAKHMANSON, RS .

SOLID-STATE ELECTRONICS, 1975, 18 (7-8) :617-626

[7]

NICOLLIAN EN, 1967, BELL SYST TECH J, V6, P1055

[8] INSB MOS INFRARED DETECTOR [J].

PHELAN, RJ ;

DIMMOCK, JO .

APPLIED PHYSICS LETTERS, 1967, 10 (02) :55-&

[9]

Pierret R. F., 1970, Solid-State Electronics, V13, P289, DOI 10.1016/0038-1101(70)90180-2

[10]

Pierret R. F., 1970, Solid-State Electronics, V13, P269, DOI 10.1016/0038-1101(70)90179-6

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