POINT-CONTACT SOLAR-CELLS - MODELING AND EXPERIMENT

[1] BASORE PA, 1984, 17TH P IEEE PHOT SPE, P637

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[3] CRANE RA, 1985, 18TH P IEEE PHOT SPE, P963

[4] DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1. [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1371 - +

[5] THE PHYSICS AND MODELING OF HEAVILY DOPED EMITTERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1878 - 1888

[6] CALCULATION OF SURFACE GENERATION AND RECOMBINATION VELOCITIES AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4267 - 4276

[7] THE ETCHED MULTIPLE VERTICAL JUNCTION SILICON PHOTO-VOLTAIC CELL [J]. SOLAR CELLS, 1982, 6 (01): : 87 - 101

[8] HO FF, 1984, 17TH P IEEE PHOT SPE, P591

[9] Kane D.E., 1985, 18TH P IEEE PHOT SPE, P578

[10] KLEINMANN OA, 1956, BELL SYST TECH J, P685

[1] BASORE PA, 1984, 17TH P IEEE PHOT SPE, P637

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[3] CRANE RA, 1985, 18TH P IEEE PHOT SPE, P963

[4] DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1. [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1371 - +

[5] THE PHYSICS AND MODELING OF HEAVILY DOPED EMITTERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1878 - 1888

[6] CALCULATION OF SURFACE GENERATION AND RECOMBINATION VELOCITIES AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4267 - 4276

[7] THE ETCHED MULTIPLE VERTICAL JUNCTION SILICON PHOTO-VOLTAIC CELL [J]. SOLAR CELLS, 1982, 6 (01): : 87 - 101

[8] HO FF, 1984, 17TH P IEEE PHOT SPE, P591

[9] Kane D.E., 1985, 18TH P IEEE PHOT SPE, P578

[10] KLEINMANN OA, 1956, BELL SYST TECH J, P685