ADVANCED EPITAXIAL SI AND GEXSI1-X MULTIPROCESSING FOR SEMICONDUCTOR-DEVICE TECHNOLOGIES

被引：5

作者：

MOSLEHI, MM

DAVIS, CJ

机构：

[1] Semiconductor Process and Design Center, Texas Instruments, Dallas

来源：

JOURNAL OF MATERIALS RESEARCH | 1990年 / 5卷 / 06期

关键词：

D O I：

10.1557/JMR.1990.1159

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A single-wafer multiprocessing technology has been developed based on the use of lamp heating and remote microwave plasma process energy sources for fabrication of in-situ-doped homoepitaxial Si and heteroepitaxial Si/GexSi1−x multilayer structures via chemical-vapor deposition. Some effective low-temperature (650°-800 °C) processes were developed for in-situ pre-epitaxial growth surface cleaning. These chemical cleaning processes employ GeH4 + H2 or GeH4 + H2 + (HF or HC1) gas mixtures with very small GeH4-to-H2 gas flow rate ratios. Multilayer heteroepitaxial structures with controlled doping and Ge fractions consisting of strained GexSi1−x layers were fabricated and characterized. © 1990, Materials Research Society. All rights reserved.

引用

页码：1159 / 1162

页数：4

共 6 条

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