SILICON SELECTIVE EPITAXIAL-GROWTH AT 800-DEGREES-C USING SIH4/H-2 ASSISTED BY H-2/AR PLASMA SPUTTER

被引：10

作者：

YEW, TR

REIF, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.101720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1014 / 1016

页数：3

共 16 条

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