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SOI BY CVD - EPITAXIAL LATERAL OVERGROWTH (ELO) PROCESS - REVIEW
被引:92
作者
:
JASTRZEBSKI, L
论文数:
0
引用数:
0
h-index:
0
JASTRZEBSKI, L
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1983年
/ 63卷
/ 03期
关键词
:
D O I
:
10.1016/0022-0248(83)90164-1
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:493 / 526
页数:34
相关论文
共 63 条
[1]
ALEXANDER EG, 1966, T METALL SOC AIME, V236, P284
[2]
CHEMICAL VAPOR-DEPOSITION APPLICATIONS IN MICROELECTRONICS PROCESSING
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
BEAN, KE
[J].
THIN SOLID FILMS,
1981,
83
(02)
: 173
-
186
[3]
EPICON CAMERA TUBE - EPITAXIAL DIODE ARRAY VIDICON
BLUMENFELD, SM
论文数:
0
引用数:
0
h-index:
0
BLUMENFELD, SM
ELLIS, GW
论文数:
0
引用数:
0
h-index:
0
ELLIS, GW
REDINGTON, RW
论文数:
0
引用数:
0
h-index:
0
REDINGTON, RW
WILSON, RH
论文数:
0
引用数:
0
h-index:
0
WILSON, RH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(11)
: 1036
-
+
[4]
BRAN PD, 1978, J CRYST GROWTH, V45, P118
[5]
LASER CRYSTALLIZATION OF THIN SI FILMS ON AMORPHOUS INSULATING SUBSTRATES
CELLER, GK
论文数:
0
引用数:
0
h-index:
0
CELLER, GK
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
63
(03)
: 429
-
444
[6]
NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES
CLAASSEN, WAP
论文数:
0
引用数:
0
h-index:
0
CLAASSEN, WAP
BLOEM, J
论文数:
0
引用数:
0
h-index:
0
BLOEM, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(01)
: 194
-
202
[7]
THE NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .2. THE SIH2CL2-H2-N2 SYSTEM
CLAASSEN, WAP
论文数:
0
引用数:
0
h-index:
0
CLAASSEN, WAP
BLOEM, J
论文数:
0
引用数:
0
h-index:
0
BLOEM, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(08)
: 1836
-
1843
[8]
THE NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .3. THE SIH4-HCL-H2 SYSTEM AT LOW-TEMPERATURES
CLAASSEN, WAP
论文数:
0
引用数:
0
h-index:
0
CLAASSEN, WAP
BLOEM, J
论文数:
0
引用数:
0
h-index:
0
BLOEM, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(06)
: 1353
-
1359
[9]
CLAASSEN WAP, 1981, SEMICONDUCTOR SILICO
[10]
COHEN C, 1982, ELECTRONICS 0922, P85
←
1
2
3
4
5
6
7
→
共 63 条
[1]
ALEXANDER EG, 1966, T METALL SOC AIME, V236, P284
[2]
CHEMICAL VAPOR-DEPOSITION APPLICATIONS IN MICROELECTRONICS PROCESSING
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
BEAN, KE
[J].
THIN SOLID FILMS,
1981,
83
(02)
: 173
-
186
[3]
EPICON CAMERA TUBE - EPITAXIAL DIODE ARRAY VIDICON
BLUMENFELD, SM
论文数:
0
引用数:
0
h-index:
0
BLUMENFELD, SM
ELLIS, GW
论文数:
0
引用数:
0
h-index:
0
ELLIS, GW
REDINGTON, RW
论文数:
0
引用数:
0
h-index:
0
REDINGTON, RW
WILSON, RH
论文数:
0
引用数:
0
h-index:
0
WILSON, RH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(11)
: 1036
-
+
[4]
BRAN PD, 1978, J CRYST GROWTH, V45, P118
[5]
LASER CRYSTALLIZATION OF THIN SI FILMS ON AMORPHOUS INSULATING SUBSTRATES
CELLER, GK
论文数:
0
引用数:
0
h-index:
0
CELLER, GK
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
63
(03)
: 429
-
444
[6]
NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES
CLAASSEN, WAP
论文数:
0
引用数:
0
h-index:
0
CLAASSEN, WAP
BLOEM, J
论文数:
0
引用数:
0
h-index:
0
BLOEM, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(01)
: 194
-
202
[7]
THE NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .2. THE SIH2CL2-H2-N2 SYSTEM
CLAASSEN, WAP
论文数:
0
引用数:
0
h-index:
0
CLAASSEN, WAP
BLOEM, J
论文数:
0
引用数:
0
h-index:
0
BLOEM, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(08)
: 1836
-
1843
[8]
THE NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .3. THE SIH4-HCL-H2 SYSTEM AT LOW-TEMPERATURES
CLAASSEN, WAP
论文数:
0
引用数:
0
h-index:
0
CLAASSEN, WAP
BLOEM, J
论文数:
0
引用数:
0
h-index:
0
BLOEM, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(06)
: 1353
-
1359
[9]
CLAASSEN WAP, 1981, SEMICONDUCTOR SILICO
[10]
COHEN C, 1982, ELECTRONICS 0922, P85
←
1
2
3
4
5
6
7
→