FORMATION OF MOS GATES BY RAPID THERMAL MICROWAVE REMOTE-PLASMA MULTIPROCESSING

被引：4

作者：

MOSLEHI, MM

SARASWAT, KC

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期

关键词：

D O I：

10.1109/EDL.1987.26680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：421 / 424

页数：4

共 13 条

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[4]

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[7] LOW-TEMPERATURE DIRECT NITRIDATION OF SILICON IN NITROGEN PLASMA GENERATED BY MICROWAVE-DISCHARGE [J].

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[8]

MOSLEHI MM, 1987, 1987 S VLSI TECHN

[9]

MOSLEHI MM, 1986, 5TH P INT S SIL MAT, V864, P379

[10] INSITU EPITAXIAL SILICON OXIDE-DOPED POLYSILICON STRUCTURES FOR MOS FIELD-EFFECT TRANSISTORS [J].

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IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :577-579

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