INSITU EPITAXIAL SILICON OXIDE-DOPED POLYSILICON STRUCTURES FOR MOS FIELD-EFFECT TRANSISTORS

[1] CONTROL OF LATERAL EPITAXIAL CHEMICAL VAPOR-DEPOSITION OF SILICON OVER INSULATORS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 519 - 523

[2] EHRLICH DJ, 1981, APPL PHYS LETT, V39, P957, DOI 10.1063/1.92624

[3] Endo N., 1982, International Electron Devices Meeting. Technical Digest, P241

[4] Estreich D. B., 1978, IEDM, P230, DOI [10.1109/IEDM.1978.189394, DOI 10.1109/IEDM.1978.189394]

[5] LIMITED REACTION PROCESSING - SILICON EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 721 - 723

[6] HIGH-DENSITY AND REDUCED LATCHUP SUSCEPTIBILITY CMOS TECHNOLOGY FOR VLSI [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 233 - 235

[7] Nagao S., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P593

[8] LIMITED REACTION PROCESSING - INSITU METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 282 - 284

[9] MINORITY-CARRIER PROPERTIES OF THIN EPITAXIAL SILICON FILMS FABRICATED BY LIMITED REACTION PROCESSING [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (12) : 4180 - 4182

[10] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508

[1] CONTROL OF LATERAL EPITAXIAL CHEMICAL VAPOR-DEPOSITION OF SILICON OVER INSULATORS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 519 - 523

[2] EHRLICH DJ, 1981, APPL PHYS LETT, V39, P957, DOI 10.1063/1.92624

[3] Endo N., 1982, International Electron Devices Meeting. Technical Digest, P241

[4] Estreich D. B., 1978, IEDM, P230, DOI [10.1109/IEDM.1978.189394, DOI 10.1109/IEDM.1978.189394]

[5] LIMITED REACTION PROCESSING - SILICON EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 721 - 723

[6] HIGH-DENSITY AND REDUCED LATCHUP SUSCEPTIBILITY CMOS TECHNOLOGY FOR VLSI [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) : 233 - 235

[7] Nagao S., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P593

[8] LIMITED REACTION PROCESSING - INSITU METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 282 - 284

[9] MINORITY-CARRIER PROPERTIES OF THIN EPITAXIAL SILICON FILMS FABRICATED BY LIMITED REACTION PROCESSING [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (12) : 4180 - 4182

[10] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508