MINORITY-CARRIER PROPERTIES OF THIN EPITAXIAL SILICON FILMS FABRICATED BY LIMITED REACTION PROCESSING

被引：18

作者：

STURM, JC

GRONET, CM

GIBBONS, JF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.336679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4180 / 4182

页数：3

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