THIN, HIGHLY DOPED LAYERS OF EPITAXIAL SILICON DEPOSITED BY LIMITED REACTION PROCESSING

被引：35

作者：

GRONET, CM ^{[1
]}

STURM, JC ^{[1
]}

WILLIAMS, KE ^{[1
]}

GIBBONS, JF ^{[1
]}

WILSON, SD ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 15期

关键词：

D O I：

10.1063/1.96620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1012 / 1014

页数：3

相关论文

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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2074 - 2076
[2] ARMIGLIATO A, 1977, SEMICONDUCTOR SILICO, P637
[3] LIMITED REACTION PROCESSING - SILICON EPITAXY
GIBBONS, JF
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 721 - 723
[4] KUBIAK RA, 1985, SILICON MOL BEAM EPI, P169
[5] MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON
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