LIMITED REACTION PROCESSING - INSITU METAL-OXIDE-SEMICONDUCTOR CAPACITORS

被引：12

作者：

STURM, JC

GRONET, CM

GIBBONS, JF

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 05期

关键词：

D O I：

10.1109/EDL.1986.26374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：282 / 284

页数：3

共 11 条

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PLUMMER, JD .

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[3]

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APPLIED PHYSICS LETTERS, 1985, 47 (07) :721-723

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ISAAC, RD .

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[6] STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS [J].

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SARASWAT, KC .

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[7] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].

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SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+

[8] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

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SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+

[9]

Nicollian E. H., 1982, METAL OXIDE SEMICOND

[10]

Nulman J., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P376

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