BARRIER HEIGHTS AT THE POLYCRYSTALLINE SILICON-SIO2 INTERFACE

被引：19

作者：

HICKMOTT, TW

ISAAC, RD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 05期

关键词：

D O I：

10.1063/1.329122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3464 / 3475

页数：12

共 37 条

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