CHARACTERISTICS OF P-DOPED POLYSILICON WITH B2H6 USED AS INSITU DOPANT SOURCE

被引：8

作者：

CHAPPELOW, RE

LIN, PT

机构：

[1] IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452

[2] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 06期

关键词：

D O I：

10.1149/1.2132966

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：913 / 916

页数：4

相关论文

共 4 条

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[2] SILICON GATE TECHNOLOGY
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[3] HOEFLER DC, 1971, ELECTRONIC NEWS 0118
[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
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