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LOW-TEMPERATURE DIRECT NITRIDATION OF SILICON IN NITROGEN PLASMA GENERATED BY MICROWAVE-DISCHARGE
被引:14
作者
:
MOSLEHI, MM
论文数:
0
引用数:
0
h-index:
0
MOSLEHI, MM
FU, CY
论文数:
0
引用数:
0
h-index:
0
FU, CY
SIGMON, TW
论文数:
0
引用数:
0
h-index:
0
SIGMON, TW
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
SARASWAT, KC
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1985年
/ 58卷
/ 06期
关键词
:
D O I
:
10.1063/1.335915
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2416 / 2419
页数:4
相关论文
共 7 条
[1]
SF6 ENHANCED NITRIDATION OF SILICON IN ACTIVE NITROGEN
[J].
GIRIDHAR, RV
论文数:
0
引用数:
0
h-index:
0
GIRIDHAR, RV
;
ROSE, K
论文数:
0
引用数:
0
h-index:
0
ROSE, K
.
APPLIED PHYSICS LETTERS,
1984,
45
(05)
:578
-580
[2]
HAZEL R, 1984, J APPL PHYS, V56, P1756
[3]
PLASMA ANODIC NITRIDATION OF SILICON IN N2-H2 SYSTEM
[J].
HIRAYAMA, M
论文数:
0
引用数:
0
h-index:
0
HIRAYAMA, M
;
MATSUKAWA, T
论文数:
0
引用数:
0
h-index:
0
MATSUKAWA, T
;
ARIMA, H
论文数:
0
引用数:
0
h-index:
0
ARIMA, H
;
OHNO, Y
论文数:
0
引用数:
0
h-index:
0
OHNO, Y
;
TSUBOUCHI, N
论文数:
0
引用数:
0
h-index:
0
TSUBOUCHI, N
;
NAKATA, H
论文数:
0
引用数:
0
h-index:
0
NAKATA, H
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(03)
:663
-666
[4]
THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI
[J].
MOSLEHI, MM
论文数:
0
引用数:
0
h-index:
0
MOSLEHI, MM
;
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
SARASWAT, KC
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
:106
-123
[5]
THERMAL NITRIDATION OF SILICON IN NITROGEN PLASMA
[J].
NAKAMURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
NAKAMURA, H
;
KANEKO, M
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
KANEKO, M
;
MATSUMOTO, S
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
MATSUMOTO, S
;
FUJITA, S
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
FUJITA, S
;
SASAKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
SASAKI, A
.
APPLIED PHYSICS LETTERS,
1983,
43
(07)
:691
-693
[6]
NITRIDATION OF SILICON IN A MULTIWAFER PLASMA SYSTEM
[J].
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
REISMAN, A
;
BERKENBLIT, M
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
BERKENBLIT, M
;
RAY, AK
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
RAY, AK
;
MERZ, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
MERZ, CJ
.
JOURNAL OF ELECTRONIC MATERIALS,
1984,
13
(03)
:505
-521
[7]
EXCIMER LASER ENHANCED NITRIDATION OF SILICON SUBSTRATES
[J].
SUGII, T
论文数:
0
引用数:
0
h-index:
0
SUGII, T
;
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
;
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
.
APPLIED PHYSICS LETTERS,
1984,
45
(09)
:966
-968
←
1
→
共 7 条
[1]
SF6 ENHANCED NITRIDATION OF SILICON IN ACTIVE NITROGEN
[J].
GIRIDHAR, RV
论文数:
0
引用数:
0
h-index:
0
GIRIDHAR, RV
;
ROSE, K
论文数:
0
引用数:
0
h-index:
0
ROSE, K
.
APPLIED PHYSICS LETTERS,
1984,
45
(05)
:578
-580
[2]
HAZEL R, 1984, J APPL PHYS, V56, P1756
[3]
PLASMA ANODIC NITRIDATION OF SILICON IN N2-H2 SYSTEM
[J].
HIRAYAMA, M
论文数:
0
引用数:
0
h-index:
0
HIRAYAMA, M
;
MATSUKAWA, T
论文数:
0
引用数:
0
h-index:
0
MATSUKAWA, T
;
ARIMA, H
论文数:
0
引用数:
0
h-index:
0
ARIMA, H
;
OHNO, Y
论文数:
0
引用数:
0
h-index:
0
OHNO, Y
;
TSUBOUCHI, N
论文数:
0
引用数:
0
h-index:
0
TSUBOUCHI, N
;
NAKATA, H
论文数:
0
引用数:
0
h-index:
0
NAKATA, H
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(03)
:663
-666
[4]
THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI
[J].
MOSLEHI, MM
论文数:
0
引用数:
0
h-index:
0
MOSLEHI, MM
;
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
SARASWAT, KC
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
:106
-123
[5]
THERMAL NITRIDATION OF SILICON IN NITROGEN PLASMA
[J].
NAKAMURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
NAKAMURA, H
;
KANEKO, M
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
KANEKO, M
;
MATSUMOTO, S
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
MATSUMOTO, S
;
FUJITA, S
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
FUJITA, S
;
SASAKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN
SASAKI, A
.
APPLIED PHYSICS LETTERS,
1983,
43
(07)
:691
-693
[6]
NITRIDATION OF SILICON IN A MULTIWAFER PLASMA SYSTEM
[J].
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
REISMAN, A
;
BERKENBLIT, M
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
BERKENBLIT, M
;
RAY, AK
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
RAY, AK
;
MERZ, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA
MERZ, CJ
.
JOURNAL OF ELECTRONIC MATERIALS,
1984,
13
(03)
:505
-521
[7]
EXCIMER LASER ENHANCED NITRIDATION OF SILICON SUBSTRATES
[J].
SUGII, T
论文数:
0
引用数:
0
h-index:
0
SUGII, T
;
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
;
ISHIKAWA, H
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, H
.
APPLIED PHYSICS LETTERS,
1984,
45
(09)
:966
-968
←
1
→