NITRIDATION OF SILICON IN A MULTIWAFER PLASMA SYSTEM

被引：7

作者：

REISMAN, A

BERKENBLIT, M

RAY, AK

MERZ, CJ

机构：

[1] MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA

[2] N CAROLINA STATE UNIV, RALEIGH, NC 27650 USA

[3] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 03期

关键词：

D O I：

10.1007/BF02656650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：505 / 521

页数：17

共 14 条

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[2]

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[7] PLASMA-ENHANCED THERMAL NITRIDATION OF SILICON [J].

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KATO, I ;

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[8] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J].

ITO, T ;

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[9] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J].

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ADAMS, AC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :996-1003

[10] PLASMA OXIDE FET DEVICES [J].

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REISMAN, A .

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