PLASMA OXIDE FET DEVICES

被引：29

作者：

RAY, AK

REISMAN, A

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 11期

关键词：

D O I：

10.1149/1.2127263

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2424 / 2428

页数：5

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[6] THE FORMATION OF SIO2 IN AN RF GENERATED OXYGEN PLASMA .2. THE PRESSURE RANGE ABOVE 10 MTORR
RAY, AK
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2466 - 2472
[7] THE FORMATION OF SIO2 IN AN RF GENERATED OXYGEN PLASMA .1. THE PRESSURE RANGE BELOW 10 MTORR
RAY, AK
REISMAN, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2460 - 2465