THERMAL NITRIDATION OF SILICON IN NITROGEN PLASMA

被引：15

作者：

NAKAMURA, H ^{[1
]}

KANEKO, M ^{[1
]}

MATSUMOTO, S ^{[1
]}

FUJITA, S ^{[1
]}

SASAKI, A ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 07期

关键词：

D O I：

10.1063/1.94447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：691 / 693

页数：3

共 8 条

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GROVE, AS .

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[3] QUANTITATIVE DETECTION OF OXYGEN IN SILICON-NITRIDE ON SILICON [J].

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STEIN, HJ .

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[4] PLASMA-ENHANCED THERMAL NITRIDATION OF SILICON [J].

ITO, T ;

KATO, I ;

NOZAKI, T ;

NAKAMURA, T ;

ISHIKAWA, H .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :370-372

[5] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J].

ITO, T ;

HIJIYA, S ;

NOZAKI, T ;

ARAKAWA, H ;

SHINODA, M ;

FUKUKAWA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :448-452

[6] SILICON OXIDE FILMS GROWN IN A MICROWAVE DISCHARGE [J].

KRAITCHMAN, J .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) :4323-+

[7]

MATSUMOTO O, 1981, 5TH P INT S PLASM CH, P382

[8] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J].

MURARKA, SP ;

CHANG, CC ;

ADAMS, AC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :996-1003

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