EXCIMER LASER ENHANCED NITRIDATION OF SILICON SUBSTRATES

被引：32

作者：

SUGII, T

ITO, T

ISHIKAWA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.95466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：966 / 968

页数：3

共 13 条

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APPLIED PHYSICS LETTERS, 1982, 40 (02) :183-185

[2] LASER PHOTODEPOSITION OF METAL-FILMS WITH MICROSCOPIC FEATURES [J].

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[3]

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EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :946-948

[5] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].

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SLACK, GA .

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[6] THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES [J].

ITO, T ;

NOZAKI, T ;

ARAKAWA, H ;

SHINODA, M .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :330-331

[7] PLASMA-ENHANCED THERMAL NITRIDATION OF SILICON [J].

ITO, T ;

KATO, I ;

NOZAKI, T ;

NAKAMURA, T ;

ISHIKAWA, H .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :370-372

[8] LASER-HEATING OF SEMICONDUCTORS - EFFECT OF CARRIER DIFFUSION IN NON-LINEAR DYNAMIC HEAT-TRANSPORT PROCESS [J].

KIM, DM ;

KWONG, DL ;

SHAH, RR ;

CROSTHWAIT, DL .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :4995-5006

[9]

OKABE H, 1978, PHOTOCHEMISTRY SMALL, P78

[10] LOW-TEMPERATURE REFRACTORY-METAL FILM DEPOSITION [J].

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BOYER, PK ;

COLLINS, GJ .

APPLIED PHYSICS LETTERS, 1982, 41 (11) :1048-1050

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