PLASMA ANODIC NITRIDATION OF SILICON IN N2-H2 SYSTEM

被引：19

作者：

HIRAYAMA, M

MATSUKAWA, T

ARIMA, H

OHNO, Y

TSUBOUCHI, N

NAKATA, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 03期

关键词：

D O I：

10.1149/1.2115669

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：663 / 666

页数：4

共 7 条

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[2]

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[4]

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[5]

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[6] LOW-PRESSURE NITRIDED-OXIDE AS A THIN GATE DIELECTRIC FOR MOSFETS [J].

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KWAN, SH ;

OLDHAM, WG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) :1139-1144

[7] GROWTH-KINETICS OF SILICON THERMAL NITRIDATION [J].

WU, CY ;

KING, CW ;

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CHEN, CT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1559-1563

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