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GROWTH-KINETICS OF SILICON THERMAL NITRIDATION
被引:47
作者
:
WU, CY
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSIN CHU,TAIWAN
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSIN CHU,TAIWAN
WU, CY
[
1
]
KING, CW
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSIN CHU,TAIWAN
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSIN CHU,TAIWAN
KING, CW
[
1
]
LEE, MK
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSIN CHU,TAIWAN
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSIN CHU,TAIWAN
LEE, MK
[
1
]
CHEN, CT
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSIN CHU,TAIWAN
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSIN CHU,TAIWAN
CHEN, CT
[
1
]
机构
:
[1]
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSIN CHU,TAIWAN
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1982年
/ 129卷
/ 07期
关键词
:
D O I
:
10.1149/1.2124207
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1559 / 1563
页数:5
相关论文
共 8 条
[1]
DIRECT NITRIDATION OF SILICON SUBSTRATES
[J].
FRIESER, RG
论文数:
0
引用数:
0
h-index:
0
FRIESER, RG
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(10)
:1092
-&
[2]
HEUMANN FK, 1968, J ELECTROCHEM SOC, V115, P331
[3]
PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
[J].
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(07)
:693
-+
[4]
THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES
[J].
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
;
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
;
ARAKAWA, H
论文数:
0
引用数:
0
h-index:
0
ARAKAWA, H
;
SHINODA, M
论文数:
0
引用数:
0
h-index:
0
SHINODA, M
.
APPLIED PHYSICS LETTERS,
1978,
32
(05)
:330
-331
[5]
VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN
[J].
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
;
HIJIYA, S
论文数:
0
引用数:
0
h-index:
0
HIJIYA, S
;
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
;
ARAKAWA, H
论文数:
0
引用数:
0
h-index:
0
ARAKAWA, H
;
SHINODA, M
论文数:
0
引用数:
0
h-index:
0
SHINODA, M
;
FUKUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FUKUKAWA, Y
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(03)
:448
-452
[6]
FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS
[J].
KOOI, E
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
KOOI, E
;
VANLIEROP, JG
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
VANLIEROP, JG
;
APPELS, JA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
APPELS, JA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(07)
:1117
-1120
[7]
THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS
[J].
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
MURARKA, SP
;
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
CHANG, CC
;
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
ADAMS, AC
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(06)
:996
-1003
[8]
NITROGEN REACTION AT A SILICON-SILICON DIOXIDE INTERFACE
[J].
RAIDER, SI
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
RAIDER, SI
;
GDULA, RA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
GDULA, RA
;
PETRAK, JR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
PETRAK, JR
.
APPLIED PHYSICS LETTERS,
1975,
27
(03)
:150
-152
←
1
→
共 8 条
[1]
DIRECT NITRIDATION OF SILICON SUBSTRATES
[J].
FRIESER, RG
论文数:
0
引用数:
0
h-index:
0
FRIESER, RG
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(10)
:1092
-&
[2]
HEUMANN FK, 1968, J ELECTROCHEM SOC, V115, P331
[3]
PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
[J].
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(07)
:693
-+
[4]
THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES
[J].
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
;
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
;
ARAKAWA, H
论文数:
0
引用数:
0
h-index:
0
ARAKAWA, H
;
SHINODA, M
论文数:
0
引用数:
0
h-index:
0
SHINODA, M
.
APPLIED PHYSICS LETTERS,
1978,
32
(05)
:330
-331
[5]
VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN
[J].
ITO, T
论文数:
0
引用数:
0
h-index:
0
ITO, T
;
HIJIYA, S
论文数:
0
引用数:
0
h-index:
0
HIJIYA, S
;
NOZAKI, T
论文数:
0
引用数:
0
h-index:
0
NOZAKI, T
;
ARAKAWA, H
论文数:
0
引用数:
0
h-index:
0
ARAKAWA, H
;
SHINODA, M
论文数:
0
引用数:
0
h-index:
0
SHINODA, M
;
FUKUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FUKUKAWA, Y
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(03)
:448
-452
[6]
FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS
[J].
KOOI, E
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
KOOI, E
;
VANLIEROP, JG
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
VANLIEROP, JG
;
APPELS, JA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
APPELS, JA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(07)
:1117
-1120
[7]
THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS
[J].
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
MURARKA, SP
;
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
CHANG, CC
;
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
ADAMS, AC
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(06)
:996
-1003
[8]
NITROGEN REACTION AT A SILICON-SILICON DIOXIDE INTERFACE
[J].
RAIDER, SI
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
RAIDER, SI
;
GDULA, RA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
GDULA, RA
;
PETRAK, JR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
PETRAK, JR
.
APPLIED PHYSICS LETTERS,
1975,
27
(03)
:150
-152
←
1
→