GROWTH-KINETICS OF SILICON THERMAL NITRIDATION

被引：47

作者：

WU, CY ^{[1
]}

KING, CW ^{[1
]}

LEE, MK ^{[1
]}

CHEN, CT ^{[1
]}

机构：

[1] IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSIN CHU,TAIWAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 07期

关键词：

D O I：

10.1149/1.2124207

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1559 / 1563

页数：5

共 8 条

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[2]

HEUMANN FK, 1968, J ELECTROCHEM SOC, V115, P331

[3] PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J].

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[4] THERMALLY GROWN SILICON-NITRIDE FILMS FOR HIGH-PERFORMANCE MNS DEVICES [J].

ITO, T ;

NOZAKI, T ;

ARAKAWA, H ;

SHINODA, M .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :330-331

[5] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J].

ITO, T ;

HIJIYA, S ;

NOZAKI, T ;

ARAKAWA, H ;

SHINODA, M ;

FUKUKAWA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :448-452

[6] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J].

KOOI, E ;

VANLIEROP, JG ;

APPELS, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) :1117-1120

[7] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J].

MURARKA, SP ;

CHANG, CC ;

ADAMS, AC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :996-1003

[8] NITROGEN REACTION AT A SILICON-SILICON DIOXIDE INTERFACE [J].

RAIDER, SI ;

GDULA, RA ;

PETRAK, JR .

APPLIED PHYSICS LETTERS, 1975, 27 (03) :150-152

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