SF6 ENHANCED NITRIDATION OF SILICON IN ACTIVE NITROGEN

被引：7

作者：

GIRIDHAR, RV

ROSE, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.95287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：578 / 580

页数：3

共 13 条

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[2]

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[3] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J].

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[4]

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[5]

GIRIDHAR RV, 1983, P S SILICON NITRIDE, V83, P312

[6] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS [J].

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KUIPER, AET ;

VANOOSTROM, A ;

TAMMINGA, Y ;

THEETEN, JB .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :404-415

[7] PLASMA-ENHANCED THERMAL NITRIDATION OF SILICON [J].

ITO, T ;

KATO, I ;

NOZAKI, T ;

NAKAMURA, T ;

ISHIKAWA, H .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :370-372

[8] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J].

ITO, T ;

HIJIYA, S ;

NOZAKI, T ;

ARAKAWA, H ;

SHINODA, M ;

FUKUKAWA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :448-452

[9]

KERN W, 1970, RCA REV, V31, P187

[10] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J].

MURARKA, SP ;

CHANG, CC ;

ADAMS, AC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :996-1003

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