Ultra-shallow p+ /n and n+/p junctions were fabricated using Silicide-As-Diffusion-Source (SADS) processing of 45 nm CoSi2 filmS (3.5 OMEGA/square) using a low thermal budget. The best junctions were made using moderate 10-s RTA annealing at 800-degrees-C for both p+/n and n+/p junctions. With these annealing conditions, enhanced dopant diffusion was observed. TEM delineation gives the out-diffusion depth from silicide which is only 8 nm for n+ junctions and 23 nm for p+ junctions at 950-degrees-C. Thus the dopant motion in the silicon is expected to be less than 10 nm at 800-degrees-C. These are believed to be the shallowest junctions formed by the SALICIDE process reported in the literature. The reverse leakage currents for SADS diodes were as low as 1.0 nA/cm 2 for p+/n, and 4.0 nA/cm2 for n+/p at 5 V. The activation energies for leakage of the 800-degrees-C junctions were above 1.0 eV indicating that very few generation centers were present. Surprisingly, for p+/n junctions, low leakage currents were obtained at RTA temperatures as low as 600-degrees-C. However, some generation centers were found with these junctions as evidenced by the lower activation energy. Good diode characteristics were obtained with a wide range of dopant implant energies. This work shows processes using cobalt disilicide as a diffusion source should be considered for deep-submicrometer CMOS applications.