ULTRA-SHALLOW JUNCTION FORMATION USING SILICIDE AS A DIFFUSION SOURCE AND LOW THERMAL BUDGET

被引:54
作者
WANG, QF [1 ]
OSBURN, CM [1 ]
CANOVAI, CA [1 ]
机构
[1] MCNC,CTR MICROELECTR,RES TRIANGLE PK,NC 27709
关键词
D O I
10.1109/16.163462
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ultra-shallow p+ /n and n+/p junctions were fabricated using Silicide-As-Diffusion-Source (SADS) processing of 45 nm CoSi2 filmS (3.5 OMEGA/square) using a low thermal budget. The best junctions were made using moderate 10-s RTA annealing at 800-degrees-C for both p+/n and n+/p junctions. With these annealing conditions, enhanced dopant diffusion was observed. TEM delineation gives the out-diffusion depth from silicide which is only 8 nm for n+ junctions and 23 nm for p+ junctions at 950-degrees-C. Thus the dopant motion in the silicon is expected to be less than 10 nm at 800-degrees-C. These are believed to be the shallowest junctions formed by the SALICIDE process reported in the literature. The reverse leakage currents for SADS diodes were as low as 1.0 nA/cm 2 for p+/n, and 4.0 nA/cm2 for n+/p at 5 V. The activation energies for leakage of the 800-degrees-C junctions were above 1.0 eV indicating that very few generation centers were present. Surprisingly, for p+/n junctions, low leakage currents were obtained at RTA temperatures as low as 600-degrees-C. However, some generation centers were found with these junctions as evidenced by the lower activation energy. Good diode characteristics were obtained with a wide range of dopant implant energies. This work shows processes using cobalt disilicide as a diffusion source should be considered for deep-submicrometer CMOS applications.
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页码:2486 / 2496
页数:11
相关论文
共 32 条
[1]   DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J].
ALPERIN, ME ;
HOLLAWAY, TC ;
HAKEN, RA ;
GOSMEYER, CD ;
KARNAUGH, RV ;
PARMANTIE, WD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :141-149
[2]  
ARMIGLIATO A, 1977, SEMICONDUCTOR SILICO, V77, P638
[3]   SELF-ALIGNED SILICIDED (PTSI AND COSI2) ULTRA-SHALLOW P+/N JUNCTIONS [J].
BROADBENT, EK ;
DELFINO, M ;
MORGAN, AE ;
SADANA, DK ;
MAILLOT, P .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) :318-320
[4]  
CANOVAI CA, 1991, THESIS N CAROLINA ST
[5]  
CHEVACHAROENKUL S, 1991, ULSI SCI TECHNOL, V91, P285
[6]  
CHEVACHAROENKUL S, UNPUB 2 DIMENSIONAL
[7]   BORON OUTDIFFUSION FROM POLYCRYSTALLINE AND MONOCRYSTALLINE COSI2 [J].
EICHHAMMER, W ;
MAEX, K ;
ELST, K ;
VANDERVORST, W .
APPLIED SURFACE SCIENCE, 1991, 53 :171-179
[8]   BORON-DIFFUSION IN SILICON-CONCENTRATION AND ORIENTATION DEPENDENCE, BACKGROUND EFFECTS, AND PROFILE ESTIMATION [J].
FAIR, RB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) :800-805
[9]   BORON, PHOSPHORUS, AND ARSENIC DIFFUSION IN TISI2 [J].
GAS, P ;
DELINE, V ;
DHEURLE, FM ;
MICHEL, A ;
SCILLA, G .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1634-1639
[10]   ULTRA SHALLOW JUNCTION FORMATION USING DIFFUSION FROM SILICIDES - SILICIDE FORMATION, DOPANT IMPLANTATION AND DEPTH PROFILING [J].
JIANG, H ;
OSBURN, CM ;
SMITH, P ;
XIAO, ZG ;
GRIFFIS, D ;
MCGUIRE, G ;
ROZGONYI, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (01) :196-206