SELF-ALIGNED SILICIDED (PTSI AND COSI2) ULTRA-SHALLOW P+/N JUNCTIONS

被引：11

作者：

BROADBENT, EK

DELFINO, M

MORGAN, AE

SADANA, DK

MAILLOT, P

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 07期

关键词：

D O I：

10.1109/EDL.1987.26644

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：318 / 320

页数：3

共 11 条

[1] PTSI CONTACT METALLURGY USING ELECTRON-BEAM EVAPORATED PT FILMS AND DIFFERENT ANNEALING PROCESSES [J].

CHANG, CA ;

CUNNINGHAM, B ;

SEGMULLER, A ;

HUANG, HCW ;

TURENE, FE ;

SUGERMAN, A ;

TOTTA, PA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03) :745-754

[2] SHALLOW JUNCTION FORMATION BY PREAMORPHIZATION WITH TIN IMPLANTATION [J].

DELFINO, M ;

SADANA, DK ;

MORGAN, AE .

APPLIED PHYSICS LETTERS, 1986, 49 (10) :575-577

[3] BORON IMPLANTATION INTO SILICON AMORPHIZED BY TIN IMPLANTATION [J].

DELFINO, M ;

MORGAN, AE ;

SADANA, DK .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :363-368

[4]

DELFINO M, 1987, PHILIPS J RES, V42

[5]

ELLWANGER RC, 1986, 3RD P INT IEEE VLSI, P457

[6] SPECIFIC CONTACT RESISTIVITY OF TISI2 TO P+ AND N+ JUNCTIONS [J].

HUI, J ;

WONG, S ;

MOLL, J .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :479-481

[7]

Kohyama S., 1983, International Electron Devices Meeting 1983. Technical Digest, P151

[8]

Lepselter M. P., 1969, Ohmic contacts to semiconductors, P159

[9] CHARACTERIZATION OF A SELF-ALIGNED COBALT SILICIDE PROCESS [J].

MORGAN, AE ;

BROADBENT, EK ;

DELFINO, M ;

COULMAN, B ;

SADANA, DK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) :925-935

[10] HIGH-TEMPERATURE STABILITY OF PTSI FORMED BY REACTION OF METAL WITH SILICON OR BY COSPUTTERING [J].

MURARKA, SP ;

KINSBRON, E ;

FRASER, DB ;

ANDREWS, JM ;

LLOYD, EJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6943-6951

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