BORON IMPLANTATION INTO SILICON AMORPHIZED BY TIN IMPLANTATION

被引：6

作者：

DELFINO, M

MORGAN, AE

SADANA, DK

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80073-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：363 / 368

页数：6

共 7 条

[1] STUDY OF TIN DIFFUSION INTO SILICON BY BACKSCATTERING ANALYSIS [J].

AKASAKA, Y ;

HORIE, K ;

NAKAMURA, G ;

TSUKAMOTO, K ;

YUKIMOTO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (10) :1533-1540

[2]

Chu W. K., 1978, BACKSCATTERING SPECT

[3] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[4] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[5]

DELFINO M, 1986, UNPUB APPL PHYS LETT, V49, P575

[6] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J].

DROSD, B ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4106-4110

[7]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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