PTSI CONTACT METALLURGY USING ELECTRON-BEAM EVAPORATED PT FILMS AND DIFFERENT ANNEALING PROCESSES

被引：8

作者：

CHANG, CA ^{[1
]}

CUNNINGHAM, B ^{[1
]}

SEGMULLER, A ^{[1
]}

HUANG, HCW ^{[1
]}

TURENE, FE ^{[1
]}

SUGERMAN, A ^{[1
]}

TOTTA, PA ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.583559

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：745 / 754

页数：10

共 19 条

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[9] OUTDIFFUSION OF SI THROUGH GOLD-FILMS - THE EFFECTS OF SI ORIENTATION, GOLD DEPOSITION TECHNIQUES AND RATES, AND ANNEALING AMBIENTS [J].

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[10]

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