OUTDIFFUSION OF SI THROUGH GOLD-FILMS - THE EFFECTS OF SI ORIENTATION, GOLD DEPOSITION TECHNIQUES AND RATES, AND ANNEALING AMBIENTS

被引：42

作者：

CHANG, CA ^{[1
]}

OTTAVIANI, G ^{[1
]}

机构：

[1] INST FIS,MODENA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 09期

关键词：

D O I：

10.1063/1.94928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：901 / 903

页数：3

共 16 条

[1] COMPETING AMBIENT EFFECTS ON THE INTER-DIFFUSION IN PT/NI/AL FILMS
CHANG, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7088 - 7091
[2] INTERACTION IN CU-AL AND PT/CU/AL THIN-FILMS - COMPETING OXYGEN EFFECTS AND PREFERENTIAL REACTION BETWEEN PT AND CU-AL ALLOY
CHANG, CA
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 310 - 312
[3] AMBIENT EFFECTS ON THE DIFFUSION OF CR AND SI IN THIN PT FILMS
CHANG, CA
CHU, WK
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 161 - 162
[4] EFFECT OF CO ON THE LOW-TEMPERATURE DIFFUSION OF CR AND SI THROUGH THIN GOLD-FILMS
CHANG, CA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1331 - 1334
[5] ANNEALING AMBIENT - A USEFUL PROBE FOR INTERFACE INTERACTIONS IN THIN-FILMS
CHANG, CA
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 860 - 862
[6] REDUCED CU-CR MIXING AND REDUCED PT-CU INTER-DIFFUSION BY OXYGEN IN CU/CR AND PT/CU/CR THIN-FILMS
CHANG, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7092 - 7094
[7] SIMILARITY IN INTERACTIONS BETWEEN METAL-SEMICONDUCTOR AND METAL METAL INTERFACES
CHANG, CA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 639 - 643
[8] EFFECT OF OXYGEN ON THE DIFFUSION OF AL IN PT FILMS
CHANG, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4620 - 4622
[9] EFFECT OF OXYGEN ON THE DIFFUSION OF NI IN PT IN PT-NI-PT FILMS
CHANG, CA
CHU, WK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 512 - 514
[10] AMBIENT EFFECTS ON THE OUT-DIFFUSION OF GAAS THROUGH THIN GOLD-FILMS
CHANG, CA
CHOU, NJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06): : 1358 - 1359

← 1 2 →