AMBIENT EFFECTS ON THE OUT-DIFFUSION OF GAAS THROUGH THIN GOLD-FILMS

[1] GALLIUM MIGRATION THROUGH CONTACT METALLIZATIONS ON GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 434 - 435

[2] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761

[3] EFFECT OF CO ON THE LOW-TEMPERATURE DIFFUSION OF CR AND SI THROUGH THIN GOLD-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1331 - 1334

[4] EVIDENCE FOR A NEW TYPE OF METAL-SEMICONDUCTOR INTERACTION ON GASB [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2682 - 2684

[5] Pauling L., 1960, NATURE CHEM BOND

[6] VARIATION OF SCHOTTKY-BARRIER ENERGY WITH INTERDIFFUSION IN AU AND NI-AU-GE FILMS ON GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 884 - 887

[7] Sinha A. K., 1978, Thin films. Interdiffusion and reactions, P407

[1] GALLIUM MIGRATION THROUGH CONTACT METALLIZATIONS ON GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 434 - 435

[2] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761

[3] EFFECT OF CO ON THE LOW-TEMPERATURE DIFFUSION OF CR AND SI THROUGH THIN GOLD-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1331 - 1334

[4] EVIDENCE FOR A NEW TYPE OF METAL-SEMICONDUCTOR INTERACTION ON GASB [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2682 - 2684

[5] Pauling L., 1960, NATURE CHEM BOND

[6] VARIATION OF SCHOTTKY-BARRIER ENERGY WITH INTERDIFFUSION IN AU AND NI-AU-GE FILMS ON GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 884 - 887

[7] Sinha A. K., 1978, Thin films. Interdiffusion and reactions, P407