ANNEALING AMBIENT - A USEFUL PROBE FOR INTERFACE INTERACTIONS IN THIN-FILMS

[1] ENHANCEMENT OF SILICON CHEMICAL VAPOR-DEPOSITION RATES AT LOW-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : 1245 - 1247

[2] AMBIENT EFFECTS ON THE DIFFUSION OF CR AND SI IN THIN PT FILMS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 161 - 162

[3] EFFECT OF CO ON THE LOW-TEMPERATURE DIFFUSION OF CR AND SI THROUGH THIN GOLD-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1331 - 1334

[4] EFFECT OF OXYGEN ON THE DIFFUSION OF NI IN PT IN PT-NI-PT FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 512 - 514

[5] AMBIENT EFFECTS ON THE OUT-DIFFUSION OF GAAS THROUGH THIN GOLD-FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06): : 1358 - 1359

[6] CHANG CC, UNPUBLISHED

[7] LOW-TEMPERATURE MIGRATION OF SILICON THROUGH METAL FILMS IMPORTANCE OF SILICON-METAL INTERFACE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02): : 401 - &

[8] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3643 - &

[9] KANG KD, 1969, IEEE T ELECTRON DEV, VED16, P356, DOI 10.1109/T-ED.1969.16757

[10] NELSON GC, 1976, STP596 ASTM AM SOC T, P68

[1] ENHANCEMENT OF SILICON CHEMICAL VAPOR-DEPOSITION RATES AT LOW-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : 1245 - 1247

[2] AMBIENT EFFECTS ON THE DIFFUSION OF CR AND SI IN THIN PT FILMS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 161 - 162

[3] EFFECT OF CO ON THE LOW-TEMPERATURE DIFFUSION OF CR AND SI THROUGH THIN GOLD-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1331 - 1334

[4] EFFECT OF OXYGEN ON THE DIFFUSION OF NI IN PT IN PT-NI-PT FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 512 - 514

[5] AMBIENT EFFECTS ON THE OUT-DIFFUSION OF GAAS THROUGH THIN GOLD-FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06): : 1358 - 1359

[6] CHANG CC, UNPUBLISHED

[7] LOW-TEMPERATURE MIGRATION OF SILICON THROUGH METAL FILMS IMPORTANCE OF SILICON-METAL INTERFACE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02): : 401 - &

[8] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3643 - &

[9] KANG KD, 1969, IEEE T ELECTRON DEV, VED16, P356, DOI 10.1109/T-ED.1969.16757

[10] NELSON GC, 1976, STP596 ASTM AM SOC T, P68