AMBIENT EFFECTS ON THE DIFFUSION OF CR AND SI IN THIN PT FILMS

被引：28

作者：

CHANG, CA ^{[1
]}

CHU, WK ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

关键词：

D O I：

10.1063/1.91808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：161 / 162

页数：2

共 7 条

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[2] CRIDER CA, 1979, 156TH EL SOC M LOS A
[3] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES
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MAYER, JW
LUGUJJO, E
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3643 - &
[4] REVIEW OF BINARY ALLOY FORMATION BY THIN-FILM INTERACTIONS
OTTAVIANI, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1112 - 1119
[5] Pauling L., 1960, NATURE CHEM BOND
[6] SOMORJAI GA, 1972, PRINCIPLES SURFACE C, P249
[7] TOMPKINS HG, 1976, J APPL PHYS, V47, P3804, DOI 10.1063/1.323265