THERMAL-OXIDATION OF TRANSITION-METAL SILICIDES ON SI - SUMMARY

[1] INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1849 - 1854

[2] THERMAL-OXIDATION OF TRANSITION-METAL SILICIDES - THE ROLE OF MASS-TRANSPORT [J]. THIN SOLID FILMS, 1983, 107 (01) : 55 - 65

[3] THERMAL-OXIDATION OF NICKEL DISILICIDE [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 175 - 177

[4] THERMAL-OXIDATION OF COBALT DISILICIDE [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (02): : 69 - 70

[5] PROPERTIES OF SIO2 GROWN ON TI, CO, NI, PD, AND PT SILICIDES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 81 - 94

[6] BARTUR M, UNPUB

[7] BARTUR M, 1983, J APPL PHYS, V54, P5407

[8] OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 824 - 826

[9] OXIDATION OF TITANIUM DISILICIDE ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (02) : 355 - 389

[10] CHEN JR, 1980, APPL PHYS LETT, V40, P263

[1] INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1849 - 1854

[2] THERMAL-OXIDATION OF TRANSITION-METAL SILICIDES - THE ROLE OF MASS-TRANSPORT [J]. THIN SOLID FILMS, 1983, 107 (01) : 55 - 65

[3] THERMAL-OXIDATION OF NICKEL DISILICIDE [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 175 - 177

[4] THERMAL-OXIDATION OF COBALT DISILICIDE [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (02): : 69 - 70

[5] PROPERTIES OF SIO2 GROWN ON TI, CO, NI, PD, AND PT SILICIDES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 81 - 94

[6] BARTUR M, UNPUB

[7] BARTUR M, 1983, J APPL PHYS, V54, P5407

[8] OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 824 - 826

[9] OXIDATION OF TITANIUM DISILICIDE ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (02) : 355 - 389

[10] CHEN JR, 1980, APPL PHYS LETT, V40, P263