THERMAL-OXIDATION OF TRANSITION-METAL SILICIDES - THE ROLE OF MASS-TRANSPORT

被引：21

作者：

BARTUR, M

机构：

来源：

THIN SOLID FILMS | 1983年 / 107卷 / 01期

关键词：

D O I：

10.1016/0040-6090(83)90007-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：55 / 65

页数：11

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共 34 条

[1] RADIOACTIVE N NI-STAR TRACER STUDY OF THE NICKEL SILICIDE GROWTH-MECHANISM
BAGLIN, JEE
ATWATER, HA
GUPTA, D
DHEURLE, FM
[J]. THIN SOLID FILMS, 1982, 93 (3-4) : 255 - 264
[2] THERMAL-OXIDATION OF NICKEL DISILICIDE
BARTUR, M
NICOLET, MA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 175 - 177
[3] THERMAL-OXIDATION OF COBALT DISILICIDE
BARTUR, M
NICOLET, MA
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (02): : 69 - 70
[4] BARTUR M, 1983, UNPUB
[5] BARTUR M, 1983, J APPL PHYS, V54, P5407
[6] OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES
CHEN, JR
HOUNG, MP
HSIUNG, SK
LIU, YC
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 824 - 826
[7] INVESTIGATION ON TISI2 THIN-FILM OXIDATION BY RADIOACTIVE-TRACER TECHNIQUE
CHEN, JR
LIU, YC
CHU, SD
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 263 - 265
[8] OXIDATION OF TITANIUM DISILICIDE ON POLYCRYSTALLINE SILICON
CHEN, JR
LIU, YC
CHU, SD
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (02) : 355 - 389
[9] THERMAL-OXIDATION OF NIOBIUM SILICIDE THIN-FILMS
CHOW, TP
HAMZEH, K
STECKL, AJ
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2716 - 2719
[10] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
CROWDER, BL
ZIRINSKY, S
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

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