THERMAL-OXIDATION OF NIOBIUM SILICIDE THIN-FILMS

被引：25

作者：

CHOW, TP ^{[1
]}

HAMZEH, K ^{[1
]}

STECKL, AJ ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2716 / 2719

页数：4

共 14 条

[1]

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[3] CHARACTERIZATION OF THIN-FILM MOLYBDENUM SILICIDE OXIDE [J].

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[4] KINETICS OF THE THERMAL-OXIDATION OF WSI2 [J].

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MEINDL, JD .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :529-531

[5]

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[6] THERMAL-OXIDATION OF HAFNIUM SILICIDE FILMS ON SILICON [J].

MURARKA, SP ;

CHANG, CC .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :639-641

[7] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792

[8]

MURARKA SP, 1980, J APPL PHYS, V51, P3251

[9]

PAWLIK D, 1982, SPR EL SOC M, V82, P310

[10] OXIDATION OF TANTALUM DISILICIDE POLYCRYSTALLINE SILICON STRUCTURES IN DRY O-2 [J].

RAZOUK, RR ;

THOMAS, ME ;

PRESSACCO, SL .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :5342-5344

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