OXIDATION OF TANTALUM DISILICIDE POLYCRYSTALLINE SILICON STRUCTURES IN DRY O-2

被引:22
作者
RAZOUK, RR
THOMAS, ME
PRESSACCO, SL
机构
关键词
D O I
10.1063/1.329884
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5342 / 5344
页数:3
相关论文
共 11 条
[1]   TANTALUM SILICIDE FILMS DEPOSITED BY DC SPUTTERING [J].
ANGILELLO, J ;
BAGLIN, JEE ;
CARDONE, F ;
DEMPSEY, JJ ;
DHEURLE, FM ;
IRENE, EA ;
MACINNES, R ;
PETERSSON, CS ;
SAVOY, R ;
SEGMULLER, AP ;
TIERNEY, E .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :59-93
[2]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[4]  
DELFINO M, COMMUNICATION
[5]   COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J].
GEIPEL, HJ ;
HSIEH, N ;
ISHAQ, MH ;
KOBURGER, CW ;
WHITE, FR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) :482-489
[6]   OXIDATION OF PHOSPHORUS-DOPED LOW-PRESSURE AND ATMOSPHERIC-PRESSURE CVD POLYCRYSTALLINE-SILICON FILMS [J].
KAMINS, TI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) :838-844
[7]   SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].
MURARKA, SP ;
FRASER, DB .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1593-1598
[8]   OXIDATION OF TANTALUM DISILICIDE ON POLYCRYSTALLINE SILICON [J].
MURARKA, SP ;
FRASER, DB ;
LINDENBERGER, WS ;
SINHA, AK .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3241-3245
[9]   REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].
MURARKA, SP ;
FRASER, DB ;
SINHA, AK ;
LEVINSTEIN, HJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) :474-482
[10]  
SARASWAT KC, 1981, JUN EL MAT C SANT BA