OXIDATION OF TANTALUM DISILICIDE ON POLYCRYSTALLINE SILICON

[1] [Anonymous], 1976, [No title captured], Patent No. 4000458

[2] CHANG CC, UNPUBLISHED

[3] Grove A. S., 1967, PHYS TECHNOL S, P29

[4] IVANOV VE, 1965, IZV AKAD NAUK SSSR N, V1, P1364

[5] REACTION OF FLOWING STEAM WITH REFRACTORY METALS NIOBIUM AND TANTALUM [J]. JOURNAL OF THE LESS-COMMON METALS, 1965, 8 (05): : 299 - +

[6] MELLIARSMITH CM, UNPUBLISHED

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[8] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349

[9] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356

[10] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1593 - 1598

[1] [Anonymous], 1976, [No title captured], Patent No. 4000458

[2] CHANG CC, UNPUBLISHED

[3] Grove A. S., 1967, PHYS TECHNOL S, P29

[4] IVANOV VE, 1965, IZV AKAD NAUK SSSR N, V1, P1364

[5] REACTION OF FLOWING STEAM WITH REFRACTORY METALS NIOBIUM AND TANTALUM [J]. JOURNAL OF THE LESS-COMMON METALS, 1965, 8 (05): : 299 - +

[6] MELLIARSMITH CM, UNPUBLISHED

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[8] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349

[9] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356

[10] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1593 - 1598