CHARACTERIZATION OF THIN-FILM MOLYBDENUM SILICIDE OXIDE

被引：44

作者：

MOCHIZUKI, T

KASHIWAGI, M

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 05期

关键词：

D O I：

10.1149/1.2129832

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1128 / 1135

页数：8

共 14 条

[1] HIGH-TEMPERATURE OXIDATION .2. MOLYBDENUM SILICIDES [J].

BERKOWIT.JB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (06) :583-&

[2]

CAMPBELL IE, 1967, HIGH TEMPERATURE MAT, P160

[3]

CHANG YA, 1959, J MATER SCI, V4, P641

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

CROWDER, BL ;

ZIRINSKY, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :291-293

[5]

CURTIS OL, 1977, J APPL PHYS, V48, P3819, DOI 10.1063/1.324248

[6] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[7] PERFORMANCE OF REFRACTORY-METAL MULTILEVEL INTERCONNECTION SYSTEM [J].

ENGELER, WE ;

BROWN, DM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) :54-&

[8] HIGH-SPEED P-CHANNEL RANDOM-ACCESS 1024-BIT MEMORY MADE WITH ELECTRON LITHOGRAPHY [J].

HENDERSON, RC ;

PEASE, RF ;

VOSHCHENKOV, AM ;

HELM, RF ;

WADSACK, RL .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (02) :92-97

[9] SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON [J].

IRENE, EA ;

DONG, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) :1146-1151

[10]

KIEFFER R, 1952, Z METALLKD, V43, P101

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