FORMATION OF PT SILICIDES - THE EFFECT OF OXYGEN

被引：31

作者：

CHANG, CA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.336093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1412 / 1414

页数：3

相关论文

共 17 条

[1] ANALYTICAL STUDY OF PLATINUM SILICIDE FORMATION
BINDELL, JB
COLBY, JW
WONSIDLER, DR
POATE, JM
CONLEY, DK
TISONE, TC
[J]. THIN SOLID FILMS, 1976, 37 (03) : 441 - 452
[2] EFFECT OF OXIDIZING AMBIENTS ON PLATINUM SILICIDE FORMATION .2. AUGER AND BACKSCATTERING ANALYSES
BLATTNER, RJ
EVANS, CA
LAU, SS
MAYER, JW
ULLRICH, BM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1732 - 1736
[3] PT2SI AND PTSI FORMATION WITH HIGH-PURITY PT THIN-FILMS
CANALI, C
CATELLANI, C
PRUDENZIATI, M
WADLIN, WH
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (01) : 43 - 45
[4] COMPETING AMBIENT EFFECTS ON THE INTER-DIFFUSION IN PT/NI/AL FILMS
CHANG, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7088 - 7091
[5] INTERACTION IN CU-AL AND PT/CU/AL THIN-FILMS - COMPETING OXYGEN EFFECTS AND PREFERENTIAL REACTION BETWEEN PT AND CU-AL ALLOY
CHANG, CA
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 310 - 312
[6] AMBIENT EFFECTS ON THE DIFFUSION OF CR AND SI IN THIN PT FILMS
CHANG, CA
CHU, WK
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 161 - 162
[7] EFFECT OF CO ON THE LOW-TEMPERATURE DIFFUSION OF CR AND SI THROUGH THIN GOLD-FILMS
CHANG, CA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) : 1331 - 1334
[8] ANNEALING AMBIENT - A USEFUL PROBE FOR INTERFACE INTERACTIONS IN THIN-FILMS
CHANG, CA
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 860 - 862
[9] REDUCED CU-CR MIXING AND REDUCED PT-CU INTER-DIFFUSION BY OXYGEN IN CU/CR AND PT/CU/CR THIN-FILMS
CHANG, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7092 - 7094
[10] SIMILARITY IN INTERACTIONS BETWEEN METAL-SEMICONDUCTOR AND METAL METAL INTERFACES
CHANG, CA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 639 - 643