CHARACTERIZATION OF A SELF-ALIGNED COBALT SILICIDE PROCESS

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 141 - 149

[2] APPLEBAUM A, 1985, J APPL PHYS, V57, P1880

[3] GROWTH OF SELECTIVE TUNGSTEN ON SELF-ALIGNED TI AND PTNI SILICIDES BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1715 - 1721

[4] SPUTTERING OF COSI(100) AND COSI2(100) SINGLE-CRYSTAL SURFACES [J]. APPLICATIONS OF SURFACE SCIENCE, 1983, 16 (3-4): : 453 - 462

[5] EPITAXIAL NICKEL AND COBALT SILICIDE FORMATION BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (02): : 141 - 145

[6] MINORITY-CARRIER DIFFUSION LENGTHS IN SILICON SLICES AND SHALLOW JUNCTION DEVICES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 173 - 182

[7] COULMAN B, 1986, IN PRESS J VAC SCI B, V4

[8] FORMATION OF TIN/TISI2/P+-SI/N-SI BY RAPID THERMAL ANNEALING (RTA) SILICON IMPLANTED WITH BORON THROUGH TITANIUM [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) : 591 - 593

[9] DELFINO M, IN PRESS PHILIPS J R

[10] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 141 - 149

[2] APPLEBAUM A, 1985, J APPL PHYS, V57, P1880

[3] GROWTH OF SELECTIVE TUNGSTEN ON SELF-ALIGNED TI AND PTNI SILICIDES BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1715 - 1721

[4] SPUTTERING OF COSI(100) AND COSI2(100) SINGLE-CRYSTAL SURFACES [J]. APPLICATIONS OF SURFACE SCIENCE, 1983, 16 (3-4): : 453 - 462

[5] EPITAXIAL NICKEL AND COBALT SILICIDE FORMATION BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (02): : 141 - 145

[6] MINORITY-CARRIER DIFFUSION LENGTHS IN SILICON SLICES AND SHALLOW JUNCTION DEVICES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 173 - 182

[7] COULMAN B, 1986, IN PRESS J VAC SCI B, V4

[8] FORMATION OF TIN/TISI2/P+-SI/N-SI BY RAPID THERMAL ANNEALING (RTA) SILICON IMPLANTED WITH BORON THROUGH TITANIUM [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) : 591 - 593

[9] DELFINO M, IN PRESS PHILIPS J R

[10] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297