GROWTH OF SELECTIVE TUNGSTEN ON SELF-ALIGNED TI AND PTNI SILICIDES BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引：22

作者：

BROADBENT, EK ^{[1
]}

MORGAN, AE ^{[1
]}

DEBLASI, JM ^{[1
]}

VANDERPUTTE, P ^{[1
]}

COULMAN, B ^{[1
]}

BURROW, BJ ^{[1
]}

SADANA, DK ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

关键词：

D O I：

10.1149/1.2109001

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1715 / 1721

页数：7

共 21 条

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MORGAN, AE
BURROW, BJ
NORCOTT, MH
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) : 591 - 593
[7] BORON ION-IMPLANTATION IN SILICON THROUGH SELECTIVELY DEPOSITED TUNGSTEN FILMS
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DEBLASI, JM
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 338 - 340
[8] DRAPER BL, 1985, 2ND P INT IEEE VLSI, P90
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[10] Gargini P. A., 1981, International Electron Devices Meeting, P54