EPITAXIAL NICKEL AND COBALT SILICIDE FORMATION BY RAPID THERMAL ANNEALING

[1] NUCLEATION-CONTROLLED THIN-FILM INTERACTIONS - SOME SILICIDES [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 285 - 287

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[3] BENARD J, 1964, OXYDATION METAUX, V2, P126

[4] DIFFUSION IN INTERMETALLIC COMPOUNDS WITH THE CAF2 STRUCTURE - A MARKER STUDY OF THE FORMATION OF NISI2 THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5678 - 5681

[5] DHEURLE FM, UNPUB

[6] Harper R. E., 1984, Thin Films and Interfaces II. Proceedings of the Symposium, P105

[7] HILL C, 1984, MATER RES SOC S P, V13, P381

[8] EPITAXIAL PTSI AND PD2SI FORMED BY RAPID THERMAL ANNEALING [J]. MATERIALS LETTERS, 1985, 3 (5-6) : 242 - 246

[9] LARSEN AN, 1984, APPL PHYS A-MATER, V33, P51, DOI 10.1007/BF01197086

[10] LARSEN AN, 1984, MATERIALS RES SOC S, V23, P727

[1] NUCLEATION-CONTROLLED THIN-FILM INTERACTIONS - SOME SILICIDES [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 285 - 287

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[3] BENARD J, 1964, OXYDATION METAUX, V2, P126

[4] DIFFUSION IN INTERMETALLIC COMPOUNDS WITH THE CAF2 STRUCTURE - A MARKER STUDY OF THE FORMATION OF NISI2 THIN-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5678 - 5681

[5] DHEURLE FM, UNPUB

[6] Harper R. E., 1984, Thin Films and Interfaces II. Proceedings of the Symposium, P105

[7] HILL C, 1984, MATER RES SOC S P, V13, P381

[8] EPITAXIAL PTSI AND PD2SI FORMED BY RAPID THERMAL ANNEALING [J]. MATERIALS LETTERS, 1985, 3 (5-6) : 242 - 246

[9] LARSEN AN, 1984, APPL PHYS A-MATER, V33, P51, DOI 10.1007/BF01197086

[10] LARSEN AN, 1984, MATERIALS RES SOC S, V23, P727