EPITAXIAL PTSI AND PD2SI FORMED BY RAPID THERMAL ANNEALING

被引：10

作者：

LARSEN, AN

CHEVALLIER, J

PEDERSEN, AS

机构：

[1] AARHUS UNIV, INST PHYS, DK-8000 AARHUS, DENMARK

[2] TECH UNIV DENMARK, SEMICOND TECHNOL LAB, DK-2800 LYNGBY, DENMARK

来源：

关键词：

D O I：

10.1016/0167-577X(85)90065-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：242 / 246

页数：5

共 16 条

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[2] HARPER RE, 1984, THIN FILMS INTERFACE, V2
[3] HOPKINS CG, 1984, THIN FILMS INTERFACE, V2, P87
[4] CHANNELING AND BACKSCATTERING STUDIES OF THE CRYSTALLINE PERFECTION AND THE THERMAL-STABILITY OF EPITAXIAL PTSI FILMS ON SI
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : 843 - 848
[6] LARSEN AN, 1984, APPL PHYS A-MATER, V33, P51, DOI 10.1007/BF01197086
[7] LARSEN AN, 1984, ENERGY BEAM SOLID IN, P727
[8] FORMATION OF PALLADIUM SILICIDE BY RAPID THERMAL ANNEALING
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (03): : 141 - 144
[9] GRAPHITE STRIP RAPID ISOTHERMAL ANNEALING OF TANTALUM SILICIDE
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JONES, RE
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1242 - 1244
[10] MAYDELLONDRUSZ EA, 1984, THIN FILMS INTERFACE, V2