GRAPHITE STRIP RAPID ISOTHERMAL ANNEALING OF TANTALUM SILICIDE

被引：8

作者：

LI, BZ

JONES, RE

DANESHVAR, K

DAVIS, J

机构：

[1] UNIV COLORADO, DEPT PHYS & ENERGY SCI, COLORADO SPRINGS, CO 80933 USA

[2] AUBURN UNIV, DEPT PHYS, AUBURN, AL 36849 USA

[3] HEWLETT PACKARD, DEPT MAT, COLORADO SPRINGS, CO 80901 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1242 / 1244

页数：3

共 16 条

[1] MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALING [J].

FULKS, RT ;

POWELL, RA ;

STACY, WT .

ELECTRON DEVICE LETTERS, 1982, 3 (07) :179-181

[2] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J].

FULKS, RT ;

RUSSO, CJ ;

HANLEY, PR ;

KAMINS, TI .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :604-606

[3] WORK FUNCTION MEASUREMENT OF TUNGSTEN POLYCIDE GATE STRUCTURES [J].

HWANG, TJ ;

ROGERS, SH ;

LI, BZ .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (04) :667-679

[4]

HWANG TJ, 1982, MAY EL SOC SPRING M

[5]

KLUG HP, 1974, XRAY DIFFRACTION PRO, P90

[6]

LI BZ, 1982, UNPUB NCR CORPORATIO

[7] PHOSPHORUS OUT DIFFUSION FROM DOUBLE-LAYERED TANTALUM SILICIDE POLYCRYSTALLINE SILICON STRUCTURE [J].

MAA, JS ;

MAGEE, CW ;

ONEILL, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :1-5

[8]

MOHAMMADI F, 1981, SOLID STATE TECHNOL, V24, P65

[9]

MURARKA SP, 1983, SILICIDE VLSI APPLIC

[10]

RULAND W, 1974, XRAY DIFFRACTION PRO, P640

← 1 2 →