WORK FUNCTION MEASUREMENT OF TUNGSTEN POLYCIDE GATE STRUCTURES

被引：10

作者：

HWANG, TJ

ROGERS, SH

LI, BZ

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 04期

关键词：

D O I：

10.1007/BF02676795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：667 / 679

页数：13

共 14 条

[1]

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[2]

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CROWDER, BL ;

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[4] TANTALUM SILICIDE POLYCRYSTALLINE SILICON - HIGH CONDUCTIVITY GATES FOR CMOS LSI APPLICATIONS [J].

FRASER, DB ;

MURARKA, SP ;

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SINHA, AK .

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[5]

HWANG TJ, 1982, MAY EL SOC SPRING M

[6]

MOHAMMADI F, 1981, SOL STATE TECH JAN, P65

[7] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].

MURARKA, SP ;

FRASER, DB ;

SINHA, AK ;

LEVINSTEIN, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1409-1417

[8] DOPANT DIFFUSION IN TUNGSTEN SILICIDE [J].

PAN, P ;

HSIEH, N ;

GEIPEL, HJ ;

SLUSSER, GJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3059-3062

[9]

RAZOUK RR, 1982, J ELECTROCHEM SOC, V129, P805

[10]

SARASWAT KC, 1979, IEDM, P462

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