TANTALUM SILICIDE POLYCRYSTALLINE SILICON - HIGH CONDUCTIVITY GATES FOR CMOS LSI APPLICATIONS

被引：10

作者：

FRASER, DB

MURARKA, SP

TRETOLA, AR

SINHA, AK

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 02期

关键词：

D O I：

10.1116/1.570756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：345 / 348

页数：4

共 15 条

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[9] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

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[10] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1593-1598

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